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conference paper
Low-frequency Noise Characterization of Dry-etched and Wet-etched InAlAs/InGaAs HEMTs
Claes, C.
•
Simoen, E.
1997
Noise in Physical Systems and 1/f fluctuations
Low-frequency noise (LFN) characteristics of dry-and wet-etched InAlAs/InGaAs HEMTS have been studied. It is found that due to passivation of deep traps by hydrogen the excess LFN (1/f and G-R) in dry-etched HEMTs is significantly lower than in wet-etched devices. All the traps as detected by LFN were found to be located in the InAlAs barrier layer.
Type
conference paper
Author(s)
Editors
Claes, C.
•
Simoen, E.
Date Issued
1997
Journal
Noise in Physical Systems and 1/f fluctuations
Start page
27
End page
30
Peer reviewed
NON-REVIEWED
Written at
EPFL
EPFL units
| Event name | Event place | Event date |
Louvain (Leuwen) , Belgium | Jul. 14-18, 1997 | |
Available on Infoscience
August 31, 2015
Use this identifier to reference this record