Low-frequency Noise Characterization of Dry-etched and Wet-etched InAlAs/InGaAs HEMTs
1997
Abstract
Low-frequency noise (LFN) characteristics of dry-and wet-etched InAlAs/InGaAs HEMTS have been studied. It is found that due to passivation of deep traps by hydrogen the excess LFN (1/f and G-R) in dry-etched HEMTs is significantly lower than in wet-etched devices. All the traps as detected by LFN were found to be located in the InAlAs barrier layer.
Details
Title
Low-frequency Noise Characterization of Dry-etched and Wet-etched InAlAs/InGaAs HEMTs
Author(s)
Ren, L. ; Duran, H.C. ; Beck, M. ; Py, M.A. ; Ilegems, Marc
Published in
Noise in Physical Systems and 1/f fluctuations
Editor(s)
Pages
27-30
Conference
14th International Conference on Noise in Physical Systems and 17f fluctuations (ICNF 97), Louvain (Leuwen) , Belgium, Jul. 14-18, 1997
Date
1997
Laboratories
LOEQ
Record Appears in
Scientific production and competences > SB - School of Basic Sciences > SB Archives > LOEQ - Laboratory of Quantum Optoelectronics
Conference Papers
Work produced at EPFL
Published
Conference Papers
Work produced at EPFL
Published
Record creation date
2015-08-31