Low-frequency Noise Characterization of Dry-etched and Wet-etched InAlAs/InGaAs HEMTs

Low-frequency noise (LFN) characteristics of dry-and wet-etched InAlAs/InGaAs HEMTS have been studied. It is found that due to passivation of deep traps by hydrogen the excess LFN (1/f and G-R) in dry-etched HEMTs is significantly lower than in wet-etched devices. All the traps as detected by LFN were found to be located in the InAlAs barrier layer.


Editor(s):
Claes, C.
Simoen, E.
Published in:
Noise in Physical Systems and 1/f fluctuations, 27-30
Presented at:
14th International Conference on Noise in Physical Systems and 17f fluctuations (ICNF 97), Louvain (Leuwen) , Belgium, Jul. 14-18, 1997
Year:
1997
Laboratories:




 Record created 2015-08-31, last modified 2018-03-17


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