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research article
Properties of alloyed AuGeNi-contacts on GaAs/Ga/AlAs-heterostructures
A reproducible and robust techique of contacting GaAs/GaAlAs heterostructures using an evaporated AuGeNi alloy has been developed. The behavior of the electrical contacts to the two-dimensional electron gas has been studied in the quantum Hall regime. Contact resistance values of typically 10-50 m-OMEGA are obtained which are stable with time and thermal cycling. This type of contact is therefore well suited to be used for precision measurements of the quantized Hall resistance.
Type
research article
Authors
Jucknischke, D.
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Buhlmann, H.J.
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•
•
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Jeckelmann, B.
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Schwitz, W.
Publication date
1991
Volume
40
Issue
2
Start page
228
End page
230
Subjects
Peer reviewed
REVIEWED
Available on Infoscience
August 27, 2015
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