Stress relaxation by surface rippling and dislocation generation in mismatched channels of InGaAs/InAlAs/InP high-electron-mobility transistors


Published in:
Applied Physics Letters, 74, 25, 3818
Year:
1999
Publisher:
American Institute of Physics
ISSN:
0003-6951
Keywords:
Laboratories:




 Record created 2015-08-27, last modified 2018-03-17


Rate this document:

Rate this document:
1
2
3
 
(Not yet reviewed)