Stress relaxation by surface rippling and dislocation generation in mismatched channels of InGaAs/InAlAs/InP high-electron-mobility transistors
1999
Details
Title
Stress relaxation by surface rippling and dislocation generation in mismatched channels of InGaAs/InAlAs/InP high-electron-mobility transistors
Author(s)
Peiró, F. ; Cornet, A. ; Beck, M. ; Py, M. A.
Published in
Applied Physics Letters
Volume
74
Issue
25
Pages
3818
Date
1999
Publisher
American Institute of Physics
ISSN
0003-6951
Laboratories
LOEQ
Record Appears in
Scientific production and competences > SB - School of Basic Sciences > SB Archives > LOEQ - Laboratory of Quantum Optoelectronics
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Record creation date
2015-08-27