Large Rashba Splitting in InAs Quantum Wells due to Electron Wave Function Penetration into the Barrier Layers

We report on zero-field spin splitting of two-dimensional electron systems. Though absent in the unbiased InAs square asymmetric quantum well (SAQW), the Rashba splitting becomes pronounced by applying a positive back-gate voltage. In our SAQW, the Rashba parameter α increases with electron density and is tuned by a factor of about 2 using an additional front gate without charging the well. We argue that the band-edge profile provides the important contribution for spin-orbit interaction due to barrier penetration of the envelope wave function. This mechanism can provide the potential for high speed implementation in spintronics.


Published in:
Physical Review Letters, 84, 26, 6074-6077
Year:
2000
ISSN:
1079-7114
Laboratories:




 Record created 2015-07-08, last modified 2018-12-03


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