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research article
Magnetization of the Fractional Quantum Hall States
We observe electron magnetism originating from fractional quantum Hall states in single-layered GaAs heterojunctions. This magnetization is entirely governed by electron-electron interaction effects. The studies were performed at temperatures between 0.3 and 7 K on gated high-mobility two-dimensional electron systems. We observe oscillations in the magnetic moment at various fractional filling factors, both for ν<1 and ν>1, which persist up to 3.8 K. Most prominent features are found at filling factors 13, 23, 45, and 85. In addition, an intrinsic strongly asymmetric magnetization around ν=1 is observed.
Type
research article
Authors
Meinel, I.
•
Hengstmann, T.
•
Grundler, D.
•
Heitmann, D.
•
Wegscheider, W.
•
Bichler, M.
Publication date
1999
Published in
Volume
82
Issue
4
Start page
819
End page
822
Peer reviewed
REVIEWED
EPFL units
Available on Infoscience
July 8, 2015
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