Magnetism in a Mn modulation-doped InAs/InGaAs heterostructure with a two-dimensional hole system
Rupprecht, B.; Krenner, W.; Wurstbauer, U.; Heyn, Ch.; Windisch, T.; Wilde, M. A.; Wegscheider, W.; Grundler, D.
2010

Abstract

For an InAsquantum well which is modulation-doped with Mn we measure directly and simultaneously the magnetization and magnetic anisotropy of, both, the two dimensional hole system (2DHS) and Mn dopants. Using highly sensitive micromechanical torque magnetometry at 400 mK we observe the de Haas-van Alphen effect of the 2DHS in a magnetic field B up to 14 T. Around B = 0 we find a magnetic hysteresis which we attribute to the spontaneous ordering of magnetic moments in the interacting Mn-hole system. Tilted field experiments suggest a uniaxial magnetic anisotropy with the easy axis in (001) growth direction.

Details

Title Magnetism in a Mn modulation-doped InAs/InGaAs heterostructure with a two-dimensional hole system
Author(s) Rupprecht, B. ; Krenner, W. ; Wurstbauer, U. ; Heyn, Ch. ; Windisch, T. ; Wilde, M. A. ; Wegscheider, W. ; Grundler, D.
Published in Journal of Applied Physics
Volume 107
Issue 9
Pages 093711
Date 2010
Publisher American Institute of Physics
ISSN 0021-8979
DOI https://doi.org/10.1063/1.3388303
Laboratories LMGN
Record Appears in Scientific production and competences > STI - School of Engineering > IMX - Institute of Materials > LMGN - Laboratory of Nanoscale Magnetic Materials and Magnonics
Peer-reviewed publications
Work outside EPFL
Journal Articles
Published
Record creation date 2015-07-08