Enhanced magnetoresistance of semiconductor-metal hybrid structures

Semiconductor-metal hybrid structures can show a large magnetoresistance effect, the extraordinary magnetoresistance (EMR) effect. In this work, we study theoretically the influence of the voltage probe configuration on the magnetoresistance of such hybrid structures. We find a configuration, in which the current sensitivity of the device is enhanced considerably if compared to the probe configuration discussed so far in the literature. We argue that this enhancement is due to the combination of the EMR effect and the Hall effect in the hybrid structure.


Published in:
PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27, 431-432
Presented at:
27th International Conference on the Physics of Semiconductors - ICPS-27, Flagstaff, Arizona (USA), 26-30 July 2004
Year:
2005
Publisher:
AIP Publishing
Keywords:
Laboratories:




 Record created 2015-07-07, last modified 2018-05-12

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