research article
Elemental Topological Insulator with Tunable Fermi Level: Strained alpha-Sn on InSb(001)
We report on the epitaxial fabrication and electronic properties of a topological phase in strained alpha-Sn on InSb. The topological surface state forms in the presence of an unusual band order not based on direct spin-orbit coupling, as shown in density functional and GW slab-layer calculations. Angle-resolved photoemission including spin detection probes experimentally how the topological spin-polarized state emerges from the second bulk valence band. Moreover, we demonstrate the precise control of the Fermi level by dopants.
Type
research article
Web of Science ID
WOS:000326051600007
Author(s)
Barfuss, A.
Dudy, L.
Scholz, M. R.
Roth, H.
Hoepfner, P.
Blumenstein, C.
Landolt, G.
Plumb, N. C.
Radovic, M.
Date Issued
2013
Published in
Volume
111
Issue
15
Article Number
157205
Editorial or Peer reviewed
REVIEWED
Written at
OTHER
EPFL units
Available on Infoscience
June 23, 2015
Use this identifier to reference this record