Carrier Mobility Extraction Methodology in Junctionless and Inversion-Mode FETs

In this paper, we propose a new method to extract the free carrier mobility in junctionless (JL) double-gate FETs biased in accumulation. We show that, in addition to assuming a well-defined field-dependent mobility law, using the well-known Y-function is not accurate enough in JL FETs. In addition, the new methodology is also interesting for inversion-mode FETs. This approach has been assessed with technology computer-aided design simulations, and confirms its robustness both for JL and inversion-mode devices.


Published in:
IEEE Transactions on Electron Devices, 62, 10, 3373-3378
Year:
2015
Publisher:
Piscataway, Institute of Electrical and Electronics Engineers
ISSN:
0018-9383
Keywords:
Laboratories:




 Record created 2015-04-15, last modified 2018-09-13


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