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research article
Carrier Mobility Extraction Methodology in Junctionless and Inversion-Mode FETs
In this paper, we propose a new method to extract the free carrier mobility in junctionless (JL) double-gate FETs biased in accumulation. We show that, in addition to assuming a well-defined field-dependent mobility law, using the well-known Y-function is not accurate enough in JL FETs. In addition, the new methodology is also interesting for inversion-mode FETs. This approach has been assessed with technology computer-aided design simulations, and confirms its robustness both for JL and inversion-mode devices.
Type
research article
Web of Science ID
WOS:000361684000038
Authors
Publication date
2015
Published in
Volume
62
Issue
10
Start page
3373
End page
3378
Peer reviewed
REVIEWED
EPFL units
Available on Infoscience
April 15, 2015
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