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research article

Creating femtosecond-laser-hyperdoped silicon with a homogeneous doping profile

Lin, Yu-Ting
•
Mangan, Niall
•
Marbach, Sophie
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2015
Applied Physics Letters

Femtosecond-laser hyperdoping of sulfur in silicon typically produces a concentration gradient that results in undesirable inhomogeneous material properties. Using a mathematical model of the doping process, we design a fabrication method consisting of a sequence of laser pulses with varying sulfur concentrations in the atmosphere, which produces hyperdoped silicon with a uniform concentration depth profile. Our measurements of the evolution of the concentration profiles with each laser pulse are consistent with our mathematical model of the doping mechanism, based on classical heat and solute diffusion coupled to the far-from-equilibrium dopant incorporation. The use of optimization methods opens an avenue for creating controllable hyperdoped materials on demand. (C) 2015 AIP Publishing LLC.

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Type
research article
DOI
10.1063/1.4907988
Web of Science ID

WOS:000349845300038

Author(s)
Lin, Yu-Ting
Mangan, Niall
Marbach, Sophie
Schneider, Tobias M.  
Deng, Guoliang
Zhou, Shouhuan
Brenner, Michael P.
Mazur, Eric
Date Issued

2015

Publisher

Amer Inst Physics

Published in
Applied Physics Letters
Volume

106

Issue

6

Article Number

062105

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
ECPS  
Available on Infoscience
April 13, 2015
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/113234
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