Two Dimensional Quantum Mechanical Simulation of Low Dimensional Tunneling Devices

We present a 2-D quantum mechanical simulation framework based on self-consistent solutions of Schrodinger-Poisson system, using the Finite Element Method. The quantum mechanical model includes direct as well as phonon-assisted transitions and it is applied to Germanium electron-hole bilayer tunnel FETs (EHBTFET). It is found that 21) direct tunneling through the underlap regions may degrade the subthreshold characteristic of germanium EHBTFETs and requires careful device optimization to make the tunneling in the overlap region dominate over the parasitic paths.


Editor(s):
Bez, R
Pavan, P
Meneghesso, G
Published in:
Proceedings Of The 2014 44Th European Solid-State Device Research Conference (Essderc 2014), 186-189
Presented at:
44th European Solid-State Device Research Conference (ESSDERC), 44th European Solid-State Device Research Conference (ESSDERC)']
Year:
2014
Publisher:
New York, IEEE
ISSN:
1930-8876
ISBN:
978-1-4799-4376-0
Laboratories:




 Record created 2015-04-13, last modified 2018-03-17


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