UV-Sensitive Low Dark-Count PureB Single-Photon Avalanche Diode

A single-photon avalanche diode with high sensitivity in the ultraviolet (UV) wavelength range has been fabricated on Si using pure boron chemical vapor deposition to create both a nanometer-thin anode junction and a robust light entrance window. The device shows high sensitivity at the wavelengths of 330-370 nm when operated in the Geiger mode and good selectivity for UV light without applying a capping filter. The dark count rates can be as low as 5 Hz at room temperature for an active area of 7 mu m(2). An implicit guard ring, using an n-enhancement implantation in the central region of the diode, is applied instead of peripheral diffused p-type guard rings to achieve a high fill factor.


Published in:
Ieee Transactions On Electron Devices, 61, 11, 3768-3774
Year:
2014
Publisher:
Piscataway, Ieee-Inst Electrical Electronics Engineers Inc
ISSN:
0018-9383
Keywords:
Laboratories:




 Record created 2014-12-30, last modified 2018-09-13


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