Growth parameters and shape specific synthesis of silicon nanowires by the VLS method
Latu-Romain, L.; Mouchet, C.; Cayron, C.; Rouviere, E.; Simonato, J.-P.
2008

Abstract

In this paper the effect of varying temperature, pressure and chemical precursors on the vapour-liquid-solid (VLS) growth of silicon nanowires (Si NWs) have been investigated. Some aspects of nucleation and growth mechanisms are discussed. Control on Si NW morphology by varying the choice of gaseous precursor (silane or dichlorosilane) at elevated temperatures is reported. © 2008 Springer Science+Business Media B.V.

Details

Title Growth parameters and shape specific synthesis of silicon nanowires by the VLS method
Author(s) Latu-Romain, L. ; Mouchet, C. ; Cayron, C. ; Rouviere, E. ; Simonato, J.-P.
Published in Journal of Nanoparticle Research
Volume 10
Pages 1287-1291
Date 2008
ISSN 13880764
Keywords
DOI https://doi.org/10.1007/s11051-007-9350-3
Laboratories LMTM
Record Appears in Scientific production and competences > EPFL Partners > Neuchâtel Campus > LMTM - Laboratory of Thermomechanical Metallurgy - PX Group Chair
Scientific production and competences > STI - School of Engineering > IMX - Institute of Materials > LMTM - Laboratory of Thermomechanical Metallurgy
Peer-reviewed publications
Work outside EPFL
Journal Articles
Published
Record creation date 2014-11-14

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