Chalcopyrite thin-film solar cells by industry-compatible ink-based process

Roux, F.; Amtablian, S.; Anton, M.; Besnard, G.; Bilhaut, L.; Bommersbach, P.; Braillon, J.; Cayron, C.; Disdier, A.; Fournier, H.; Garnier, J.; Jannaud, A.; Jouhannaud, J.; Kaminski, A.; Karst, N.; Noël, S.; Perraud, S.; Poncelet, O.; Raccurt, O.; Rapisarda, D.; Ricaud, A.; Rouchon, D.; Roumanie, M.; Rouviere, E.; Sicardy, O.; Sonier, F.; Tarasov, K.; Tardif, F.; Tomassini, M.; Villanova, J.

doi:10.1016/j.solmat.2013.03.029

2013

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Abstract

We developed a new industry-compatible ink-based process to produce efficient chalcopyrite CuIn1-xGaxSe2 thin-film solar cells. Metallic In and Ga nanoparticles were produced by purely physical methods, using a low-cost and non-explosive solvent. The solvent acts as a protection against oxidation and can be removed without leaving carbon contamination. We formulated inks that can be safely coated in air by doctor blading. The precursors were converted into a functional absorber after annealing under Se vapors in a primary vacuum. This simple two-step process led to chalcopyrite CuIn1-xGaxSe2 thin-films with strong mechanical adhesion, and power conversion efficiency higher than 7%. © 2013 Elsevier B.V. All rights reserved.