Light trapping in thin-film solar cells measured by Raman spectroscopy

In this study, Raman spectroscopy is used as a tool to determine the light-trapping capability of textured ZnO front electrodes implemented in microcrystalline silicon (mu c-Si:H) solar cells. Microcrystalline silicon films deposited on superstrates of various roughnesses are characterized by Raman tnicro-spectroscopy at excitation wavelengths of 442 nm, 514 nm, 633 nm, and 785 nm, respectively. The way to measure quantitatively and with a high level of reproducibility the Raman intensity is described in details. By varying the superstrate texture and with it the light trapping in the mu c-Si:H absorber layer, we find significant differences in the absolute Raman intensity, measured in the near infrared wavelength region (where light trapping is relevant). A good agreement between the absolute Raman intensity and the external quantum efficiency of the pc-Si:H solar cells is obtained, demonstrating the validity of the introduced method. Applications to thin-film solar cells, in general, and other optoelectronic devices are discussed. (C) 2014 AIP Publishing LLC.

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Applied Physics Letters, 105, 11
Melville, American Institute of Physics
IMT-NE Number : 779

Note: The status of this file is: EPFL only

 Record created 2014-11-13, last modified 2018-01-28

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