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conference paper
A 110mW 6 Bit 36GS/S Interleaved SAR ADC for 100 GBE Occupying 0.048mm2 in 32nm SOI CMOS
2014
Proceedings of the 2014 IEEE Asian Solid-State Circuits Conference
An area- and power-optimized asynchronous 32x interleaved SAR ADC achieving 36 GS/s at 110mW and 1V supply on the interleaver and 0.9V on the SAR ADCs is presented. The ADC features a 2-channel interleaver with data demultiplexing for enhanced bandwidth, a power- and area optimized binary SAR ADC, and an area optimized clocked reference buffer with a tunable constant current source. It achieves 32.6 dB SNDR up to 3GHz and 31.6 dB up to 18 GHz input frequency and 98 fJ/conversion-step with a core chip area of 340x140 um2 in 32nm SOI CMOS technology.
Type
conference paper
Authors
•
Pliva, Jan
•
Toifl, Thomas
•
Schmatz, Martin
•
Francese, Pier Andrea
•
Menolfi, Christian
•
Braendli, Matthias
•
Kossel, Marcel
•
Morf, Thomas
•
Andersen, Toke Meyer
Publication date
2014
Published in
Proceedings of the 2014 IEEE Asian Solid-State Circuits Conference
Start page
89
End page
92
Subjects
Peer reviewed
REVIEWED
EPFL units
Event name | Event place | Event date |
Kaohsiung, Taiwan | 10-12 November, 2014 | |
Available on Infoscience
October 8, 2014
Use this identifier to reference this record