A Schottky-Barrier Silicon FinFET with 6.0 mV/dec Subthreshold Slope over 5 Decades of Current

In this paper, we demonstrate a steep Subthreshold Slope (SS) silicon FinFET with Schottky-barrier source/drain. The device shows a minimal SS of 3.4 mV/dec and an average SS of 6.0 mV/dec over 5 decades of current swing. Ultra-low leakage floor of 0.06 pA/μm is also achieved with high Ion/Ioff ratio of 107.


Published in:
Proceedings of the International Electron Devices Meeting (IEDM’14)
Presented at:
International Electron Devices Meeting (IEDM’14), San Francisco, California, USA, December 15-17, 2014
Year:
2014
Laboratories:




 Record created 2014-09-30, last modified 2018-03-17

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