Optically pumped wafer fused 1310 nm VECSELs have the advantage of high output power and wavelength agility. Gain mirrors in these lasers are formed by direct bonding of InAlGaAs/InP active cavities to Al(Ga) As/GaAs DBRs. We present for the first time Watt-level 1310 nm wafer-fused VCSELs based on gain mirrors with heat dissipation in the "flip-chip" configuration. Even though output power levels in this approach is lower than with intra-cavity diamond heat-spreaders, the "flip-chip configuration demonstrates higher quality optical emission and is preferable for industrial applications in optical amplifiers, intra-cavity doubled lasers, etc.