Wafer-fused VECSELs emitting in the 1310 nm waveband
Optically pumped wafer fused 1310 nm VECSELs have the advantage of high output power and wavelength agility. Gain mirrors in these lasers are formed by direct bonding of InAlGaAs/InP active cavities to Al(Ga) As/GaAs DBRs. We present for the first time Watt-level 1310 nm wafer-fused VCSELs based on gain mirrors with heat dissipation in the "flip-chip" configuration. Even though output power levels in this approach is lower than with intra-cavity diamond heat-spreaders, the "flip-chip configuration demonstrates higher quality optical emission and is preferable for industrial applications in optical amplifiers, intra-cavity doubled lasers, etc.
WOS:000336041100011
2014
Bellingham
978-0-8194-9879-3
8
Proceedings of SPIE
8966
REVIEWED
EPFL
Event name | Event place | Event date |
San Francisco, CA | FEB 02-04, 2014 | |