Sol-gel deposition of PZT thin films on ceramic ZrO2 substrates

Pb(Zr1–xTix)O3 thin films (x = 0.55 and 0.85) were prepared on fine grained, polished ZrO2 ceramic substrates by a sol-gel method. The high thermal expansion of ZrO2 relative to Si allows the preparation of thicker PZT films with reduced thermal stress. For the x = 0.85 films, this reduction of thermal stress gives a preference of (001) over (100) oriented domains. For x = 0.55 films, square P–E hysteresis loops were obtained with: Pr = 36 µC/Cm2, and Ec = 45 kV/cm, at a field of 160 kV/cm. Pyroelectric figures of merit, defined as P/eps, of 0.93 were measured for a 4.0 µm thick Pb(Zr0.15Ti0.85)O3 film. The measured properties were comparable to those of highly (111) oriented films on Si. Thus, the (001) texture must be increased in order to realize improved properties.


Published in:
ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics, 2, 611-614
Presented at:
ISAF '96. Tenth IEEE International Symposium on Applications of Ferroelectrics, East Brunswick, NJ, USA, 18-21.8.1996
Year:
1996
Publisher:
IEEE
Keywords:
Laboratories:




 Record created 2014-05-27, last modified 2018-03-17

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