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conference paper
Comparison between front- and back-gating of Silicon Nanoribbons in real-time sensing experiments
2013
Nanotechnology (IEEE-NANO), 2013 13th IEEE Conference on
Field-effect transistors (FETs) with open gate structures such as Silicon Nanoribbons (SiNRs) are promising candidates to become general platforms for ultrasensitive, label-free and real-time detection of biochemical interactions on surface. This work proposes and demonstrates the viability of a solution for integrating Ag/AgCl reference electrodes with the microfluidics. A comparison between different polarization schemes is carried out with an analysis of the respective advantages and disadvantages.
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IEEEnano2013_Accastelli.pdf
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openaccess
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482.61 KB
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Adobe PDF
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