Controlled growth of a line defect in graphene and implications for gate-tunable valley filtering

Atomically precise tailoring of graphene can enable unusual transport pathways and new nanometer-scale functional devices. Here we describe a recipe for the controlled production of highly regular "5-5-8" line defects in graphene by means of simultaneous electron irradiation and Joule heating by applied electric current. High-resolution transmission electron microscopy reveals individual steps of the growth process. Extending earlier theoretical work suggesting valley-discriminating capabilities of a graphene 5-5-8 line defect, we perform first-principles calculations of transport and find a strong energy dependence of valley polarization of the charge carriers across the defect. These findings inspire us to propose a compact electrostatically gated "valley valve" device, a critical component for valleytronics.


Published in:
Physical Review B, 89, 12
Year:
2014
Publisher:
College Pk, Amer Physical Soc
ISSN:
1098-0121
Laboratories:




 Record created 2014-05-02, last modified 2018-09-13


Rate this document:

Rate this document:
1
2
3
 
(Not yet reviewed)