Recent enhancements in BSIM6 bulk MOSFET model
Agarwal, H.; Venugopalan, S.; Chalkiadaki, M.-A.; Paydavosi, N.; Duarte, J. P.; Agnihotri, S.; Yadav, C.; Kushwaha, P.; Chauhan, Y. S.; Enz, C. C.; Niknejad, A.; Hu, C.
2013

Résumé

In this paper, we discuss the recent enhancements made in the BSIM6 bulk MOSFET model. BSIM6 is the latest compact model of bulk MOSFET from BSIM group which have body referenced charge based core. Junction capacitance model is improved over BSIM4 and is infinitely continuous around Vbs=V bd=0V. Symmetry of the model is successfully validated by performing Gummel Symmetry Test (GST) in DC and symmetry test for capacitances in AC. Self heating model is also included in BSIM6 and test results are reported. Model capabilities are compared against an advanced 40nm CMOS technology and it is observed that simulated results are in excellent agreement with the measured data. © 2013 IEEE.

Détails

Titre Recent enhancements in BSIM6 bulk MOSFET model
Auteur(s) Agarwal, H. ; Venugopalan, S. ; Chalkiadaki, M.-A. ; Paydavosi, N. ; Duarte, J. P. ; Agnihotri, S. ; Yadav, C. ; Kushwaha, P. ; Chauhan, Y. S. ; Enz, C. C. ; Niknejad, A. ; Hu, C.
Publié dans International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
Pages 53-56
Présenté à Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, UK, 3-5 Sept. 2013
Date 2013
DOI https://doi.org/10.1109/SISPAD.2013.6650572
Laboratoires ICLAB
Le document apparaît dans Production scientifique et compétences > STI - Faculté des sciences et techniques de l'ingénieur > STI Archives > ICLAB - Laboratoire de circuits intégrés
Production scientifique et compétences > Partenaires EPFL > Campus Neuchâtel > ICLAB - Laboratoire de circuits intégrés
Publications validées par des pairs
Travail hors EPFL
Papiers de conférence
Publié
Date de création de la notice 2014-03-13

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