Amorphous silicon based betavoltaic devices

Hydrogenated amorphous silicon betavoltaic devices are studied both by simulation and experimentally. Devices exhibiting a power density of 0.1 μW/cm2 upon Tritium exposure were fabricated. However, a significant degradation of the performance is taking place, especially during the first hours of the exposure. The degradation behavior differs from sample to sample as well as from published results in the literature. Comparisons with degradation from beta particles suggest an effect of tritium rather than a creation of defects by beta particles.


Published in:
MRS Proceedings, 1536, 73-78
Presented at:
MRS Spring Meetings, San Francisco, April 2013
Year:
2013
Keywords:
Note:
IMT-NE Number : 730
Laboratories:




 Record created 2014-03-05, last modified 2018-09-13

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