Parasitic absorption in the rear reflector of a silicon solar cell: Simulation and measurement of the sub-bandgap reflectance for common dielectric/metal reflectors

The rear side of a silicon solar cell is often designed to minimize surface recombination, series resistance, and cost, but not necessarily parasitic absorption. We present a comprehensive study of parasitic absorption in the metal layer of solar cells with dielectric/metal rear reflectors. The sub-bandgap reflectance of a solar cell or test structure is proposed as an experimentally accessible probe of parasitic absorption, and it is correlated with short-circuit current density. The influence of surface texture, dielectric refractive index and thickness, and metal refractive index on sub-bandgap reflectance-and thus current is then both calculated and measured. From the results, we formulate design rules that promote optimum infrared response in a wide variety of silicon solar cells. (C) 2013 Elsevier B.V. All rights reserved.


Published in:
Solar Energy Materials And Solar Cells, 120, 426-430
Presented at:
3rd International Conference on Crystalline Silicon Photovoltaics (SiliconPV), Hamelin, GERMANY, MAR 25-27, 2013
Year:
2014
Publisher:
Amsterdam, Elsevier Science Bv
ISSN:
0927-0248
Keywords:
Note:
IMT-NE Number : 759
Laboratories:


Note: The status of this file is: EPFL only


 Record created 2014-02-17, last modified 2018-03-17

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