Photosensitivity and Luminescence Induced by ArF-Irradiation of Hydrogen Loaded Bi-SiO2 Fiber

Bi:SiO2 fiber drawn under oxidizing conditions shows ultra-low photosensitivity and no NIR luminescence under 1064 nm pumping. Hydrogen loading followed by ArF irradiation induced both. The increase of photosensitivity and the creation of luminescence centers seem to be linked to the reduction of Bi3+.


Published in:
Proceedings of the 39th European Conference on Optical Communication (ECOC'2013), Tu.3.A.2
Presented at:
39th European Conference on Optical Communication (ECOC'2013), London, UK, September 22 - 26, 2013
Year:
2013
Laboratories:




 Record created 2014-02-17, last modified 2018-03-17


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