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research article
Explicit drain current model of junctionless double-gate field-effect transistors
This paper presents an explicit drain current model for the junctionless double-gate metal-oxide-semiconductor field-effect transistor. Analytical relationships for the channel charge densities and for the drain current are derived as explicit functions of applied terminal voltages and structural parameters. The model is validated with 2D numerical simulations for a large range of channel thicknesses and is found to be very accurate for doping densities exceeding 10(18) cm(-3), which are actually used for such devices. (C) 2013 Elsevier Ltd. All rights reserved.
Type
research article
Web of Science ID
WOS:000327291800020
Authors
Publication date
2013
Publisher
Published in
Volume
89
Start page
134
End page
138
Peer reviewed
REVIEWED
EPFL units
Available on Infoscience
January 9, 2014
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