Femto-Molar Sensitive Field Effect Transistor Biosensors Based on Silicon Nanowires and Antibodies

This article presents electrically-based sensors made of high quality silicon nanowire field effect transistors (SiNW- FETs) for high sensitive detection of vascular endothelial growth factor (VEGF) molecules. SiNW-FET devices, fabricated through an IC/CMOS compatible top-down approach, are covalently functionalized with VEGF monoclonal antibodies in order to sense VEGF. Increasing concentrations of VEGF in the femto molar range determine increasing conductance values as proof of occurring immuno-reactions at the nanowire (NW) surface. These results confirm data in literature about the possibility of sensing pathogenic factors with SiNW-FET sensors, introducing the innovating aspect of detecting biomolecules in dry conditions.


Published in:
Proceedings of the IEEE Sensors 2013
Presented at:
IEEE Sensors, Baltimore, Maryland, USA, November 4-6, 2013
Year:
2013
Laboratories:




 Record created 2013-12-12, last modified 2018-03-17

n/a:
Download fulltext
PDF

Rate this document:

Rate this document:
1
2
3
 
(Not yet reviewed)