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research article
A novel ultra low-energy sub-threshold inverter based on nanoscale Field Effect Diode
A novel sub-threshold inverter based on nanoscale Field Effect Diode (FED) and a basic static CMOS inverter are investigated in this paper. Simulation results demonstrate that power consumption and Power Delay Product (PDP) of the sub-threshold inverter which is designed with nanoscale FED are 57.9% and 18.21% less than these factors in a comparable CMOS sub-threshold inverter. So the nanoscale FED scheme can provide better power efficiency than standard sub-threshold CMOS inverters.
Type
research article
Authors
Jazayeri, Farzan
•
Sammak, Ahmad
•
Forouzandeh, Behjat
•
Raissi, Farshid
Publication date
2010
Published in
Volume
7
Issue
13
Start page
906
End page
912
Peer reviewed
NON-REVIEWED
EPFL units
Available on Infoscience
October 19, 2013
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