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research article
Trans-Capacitance Modeling in Junctionless Symmetric Double Gate MOSFETs
We have developed a closed-form solution for trans-capacitances in long-channel Junctionless Double Gate MOSFET. This approach, which is derived from a coherent charge-based model, was fully validated with Technology Computer Aided Design simulations. According to this work, a complete intrinsic capacitance network is obtained, which represents an essential step towards AC analysis of circuits based on junctionless devices.
Type
research article
Authors
Publication date
2013
Published in
Volume
60
Issue
12
Start page
4034
End page
4040
Peer reviewed
REVIEWED
EPFL units
Available on Infoscience
October 18, 2013
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