Electrical contacts to single nanowires: a scalable method allowing multiple devices on a chip. Application to a single nanowire radial p-i-n junction
Semiconductor nanowires are currently at the forefront of research in the areas of nanoelectronics and energy conversion. In all these studies, realising electrical contacts and statistically relevant measurements is a key issue. We propose a method that enables to contact hundreds of nanowires on a single wafer in an extremely fast electron beam lithography session. The method is applied to nanowire-based radial GaAs p-i-n junction. Current-voltage characteristics are shown, along with scanning photocurrent mapping.
IJNT-4-Blanc et al-aspublished.pdf
openaccess
574.42 KB
Adobe PDF
42541b7e953eee83b29860971db0a214