Application of stencil masks for ion beam lithographic patterning

The application of Au/Si3N4 stencil masks for the transfer of patterns using different MeV-ion beams with various substrates has been investigated. The techniques investigated were namely, conventional lithography with positive- and negative-tone resist polymers, oxygen ion-induced etching of PTFE and patterning using an etch-stop in silicon. We demonstrate that using different well-known microtechnology material-modification techniques, patterns can be transferred using stencil masks and broad ion beams to nanomachining scenarios. In the case of the etch-stop process; writing of 3D micropatterns with different height levels was achieved using a broad beam. The stencil masks were found to be durable with no obvious deterioration and well suited for exposure of large areas. (C) 2013 Elsevier B.V. All rights reserved.


Published in:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 306, 292-295
Year:
2013
Publisher:
Amsterdam, Elsevier
ISSN:
0168-583X
Keywords:
Laboratories:


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 Record created 2013-10-01, last modified 2018-03-17

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