Optical, structural, and morphological characterisation of epitaxial ZnO films grown by pulsed-laser deposition

We report on ZnO epitaxial growth by pulsed-laser deposition (PLD) on different substrates, such as quartz, sapphire, and GaN template. Approximately 1 mu m-thick films were grown under different substrate temperatures and background oxygen conditions. X-ray diffraction analysis indicated preferential growth along the c-axis direction with a full-width at half maximum(FWHM) of the rocking curve as narrow as 230 arcs in the case of the GaN template. Low-temperature photoluminescence showed A-excitonic emission near 3.36 eV and a FWHM of (DXA)-X-0 emission as small as 2.89 meV at 9 K. Atomic force microscope measurements showed that roughness as low as 18 nm could be obtained. These results prove that PLD is a low-cost technique suitable to grow heteroepitaxial ZnO layers with excellent properties in terms of luminescence, crystallinity and morphology. (C) 2013 Elsevier B.V. All rights reserved.


Published in:
Thin Solid Films, 539, 55-59
Year:
2013
Publisher:
Lausanne, Elsevier Science Sa
ISSN:
0040-6090
Keywords:
Laboratories:




 Record created 2013-10-01, last modified 2018-09-13


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