Defect energy levels of the As-As dimer at InGaAs/oxide interfaces: A first principles study

Charge transition levels of the As-As dimer defect at the InGaAs/Al2O3 interface are determined through density-functional calculations. At variance with the GaAs/Al2O3 interface where this defect gives rise to states within the band gap, its defect levels at the InGaAs/Al2O3 interface lie well above the conduction-band edge, irrespective of the composition of the first-neighbor shell surrounding the defect. These results rule out the As-As dimer as possible origin of band-gap states at InGaAs/Al2O3 interfaces. (C) 2013 Elsevier B.V. All rights reserved.


Published in:
Microelectronic Engineering, 109, 60-63
Year:
2013
Publisher:
Amsterdam, Elsevier
ISSN:
0167-9317
Keywords:
Laboratories:




 Record created 2013-10-01, last modified 2018-03-17


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