Domain and lattice contributions to dielectric and piezoelectric properties of PZT thin films as a function of composition

• Published in: Journal of Materials Research (ISSN: 0884-2914), vol. 14, num. 11, p. 4307-4318
• Publication date: 1999

In situ reactively sputter deposited, 300-nm-thick Pb(Zrx,Ti1-x)O3 thin films were investigated as a function of composition, texture, and different electrodes (Pt,RuO2). X-ray diffraction analysis, ferroelectric, dielectric, and piezoelectric measurements were carried out. While for dielectric properties bulklike contributions from lattice as well as from domains are observed, domain wall contributions to piezoelectric properties are very much reduced in the morphotropic phase boundary (MPB) region. Permittivity and d33 do not peak at the same composition; the MPB region is broadened up and generally shifted to the tetragonal side.

Keywords: PZT thin films ; sputtering ; ferroelecttricity ; piezoelectricity ; ceramics ; microstructure ; capacitors ; texture

Note:

Hiboux, S Swiss Fed Inst Technol, Lab Ceram, CH-1015 Lausanne, Switzerland Swiss Fed Inst Technol, Lab Ceram, CH-1015 Lausanne, Switzerland

257FC

Times Cited:33

Cited References Count:31

Reference

• EPFL-ARTICLE-188066

Record created on 2013-08-11, modified on 2017-05-10