Towards fabrication of Vertical Slit Field Effect Transistor (VeSFET) as new device for nano-scale CMOS technology

This paper proposes a CMOS based process for Vertical Slit Field Effect Transistors. The central part of the device, namely, the vertical slit, is defined by using electron beam lithography and silicon dry etching. In order to verify the validity and the reproducibility of the process, devices having the slit width ranging from 16 nm to 400 nm were fabricated, with slit conductance in the range 0.6 to 3 milliSiemens, in agreement with the expected values. © 2011 IEEE.


Published in:
CAS 2011 Proceedings (2011 International Semiconductor Conference), 325-328
Presented at:
2011 International Semiconductor Conference (CAS 2011), Sinaia, Romania, 17-19 October 2011
Year:
2011
Publisher:
IEEE
Keywords:
Laboratories:




 Record created 2013-08-07, last modified 2018-03-17


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