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research article
Transient Off-Current in Junctionless FETs
We report preliminary measurements of transient drain current undershoot with time constants of the order of milliseconds in thick and highly doped n-type junctionless fieldeffect transistors. This effect might be attributed to a process involving generation of holes in the n-type-doped channel, which can also explain the partial channel depletion as consequence of channel screening by an inversion layer, thus impeding the device to be switched off. The approach described in this work could also be used for characterization of silicon channels in junctionless nanowires.
Type
research article
Web of Science ID
WOS:000319355500043
Authors
Publication date
2013
Published in
Volume
60
Issue
6
Start page
2080
End page
2083
Peer reviewed
REVIEWED
Available on Infoscience
August 7, 2013
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