Deep reactive ion etching and focused ion beam combination for nanotip fabrication
We have studied the fabrication of high-aspect ratio silicon tips by a combination of deep reactive ion etching and focused ion beam. The reactive ion etching is used to obtain so-called "rocket tips" which can be fabricated with a high aspect ratio. The rocket tips are further processed by using a focused ion beam to obtain nanotips at their apex. Typical results obtained are nanotips with a basis radius of 200 nm and a height of 2.5 mu m, with an apex radius of 5 nm, located on top of a 3 mu m wide and 9 mu m high silicon column. The process would allow however obtaining column heights of several tens of microns. (c) 2006 Elsevier B.V All rights reserved.
WOS:000236014400002
2006
26
2-3
164
168
Plaza, JA CSIC, Ctr Nacl Microelect, IMB, Campus UAB, Barcelona, Spain CSIC, Ctr Nacl Microelect, IMB, Barcelona, Spain CREBEC, Nanobioengn Lab, Barcelona 08028, Spain
Sp. Iss. SI
021VQ
Cited References Count:10
REVIEWED