Silicon microcantilevers with MOSFET detection

We report the fabrication of silicon microcantilevers with MOSFET detection, to be used in force measurements for biomolecular detection. Thin cantilevers are required for a high force sensitivity. Therefore the source and drain of the transistors have been fabricated by As implantation to obtain shallow PN junctions. The cantilevers have been oriented on the non-standard (100) crystallographic direction of silicon, to maximize the stress response of the NMOS transistors. The force sensitivity and resolution of the cantilevers have been tested by applying a force with an AFM tip. Values of 25 mu V/pN and 56 pN respectively have been obtained for a force applied at the tip of a cantilever with a length of 200 pm, a width of 24 mu m and a silicon thickness of 340 nm. (C) 2009 Elsevier B.V. All rights reserved.


Published in:
Microelectronic Engineering, 87, 5-8, 1245-1247
Year:
2010
ISSN:
0167-9317
Keywords:
Note:
Bausells, J CSIC, IMB CNM, Inst Microelect Barcelona, Campus UAB, Bellaterra 08193, Spain CSIC, IMB CNM, Inst Microelect Barcelona, Campus UAB, Bellaterra 08193, Spain CSIC, IMB CNM, Inst Microelect Barcelona, Bellaterra 08193, Spain CALTECH, Pasadena, CA 91125 USA
578NO
Times Cited:1
Cited References Count:14
Laboratories:




 Record created 2013-08-06, last modified 2018-03-17

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