Amorphous/crystalline silicon interface defects induced by hydrogen plasma treatments

Excellent amorphous/crystalline silicon interface passivation is of extreme importance for high-efficiency silicon heterojunction solar cells. This can be obtained by inserting hydrogen-plasma treatments during deposition of the amorphous silicon passivation layers. Prolonged hydrogen-plasmas lead to film etching. We report on the defect creation induced by such treatments: A severe drop in interface-passivation quality is observed when films are etched to a thickness of less than 8 nm. Detailed characterization shows that this decay is due to persistent defects created at the crystalline silicon surface. Pristine interfaces are preserved when the post-etching film thickness exceeds 8 nm, yielding high quality interface passivation. (C) 2013 AIP Publishing LLC.


Published in:
Applied Physics Letters, 102, 231604
Year:
2013
Publisher:
Melville, American Institute of Physics
ISSN:
0003-6951
Keywords:
Note:
IMT-NE Number : 714
Laboratories:


Note: The status of this file is: EPFL only


 Record created 2013-06-18, last modified 2018-03-17

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