Tunneling and Occupancy Probabilities: How Do They Affect Tunnel-FET Behavior?

In this letter, the occupancy and tunneling probabilities of interband tunneling devices are studied, pointing out the fundamental function of the source Fermi-Dirac distribution. Particularly, the reason for the degraded subthreshold swing, which is typical of devices with highly doped source, is explained, and its relation with the high-energy source Fermi tail is carefully analyzed. Simultaneously, the poor driving capability of Tunnel-FET devices is investigated, highlighting the primary role played by the occupancy functions.


Published in:
IEEE Electron Device Letters, 34, 6, 726-728
Year:
2013
Publisher:
Piscataway, Ieee-Inst Electrical Electronics Engineers Inc
ISSN:
1558-0563
Keywords:
Laboratories:




 Record created 2013-05-31, last modified 2018-03-17


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