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  4. Junctionless silicon nanowire transistors for the tunable operation of a highly sensitive, low power sensor
 
research article

Junctionless silicon nanowire transistors for the tunable operation of a highly sensitive, low power sensor

Buitrago, Elizabeth
•
Fagas, Giorgos
•
Badia, Montserrat Fernández-Bolaños
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2013
Sensors and Actuators B: Chemical

Silicon nanowire (SiNW) field effect transistors (FETs) have been widely investigated as biological sensors for their remarkable sensitivity due to their large surface to volume ratio (S/V) and high selectivity towards a myriad of analytes through functionalization. In this work, we propose a long channel (L > 500 nm) junctionless nanowire transistor (JNT) SiNW sensor based on a highly doped, ultrathin body field-effect transistor with an organic gate dielectric epsilon(r) = 1.7. The operation regime (threshold voltage V-th) and electrical characteristics of JNTs can be directly tuned by the careful design of the NW/Fin FET. JNTs are investigated through 3D Technology Computer Aided Design (TCAD) simulations performed as a function of geometrical dimensions and channel doping concentration N-d for a p-type tri-gated structure. Two different materials, namely, an oxide and an organic monolayer, with varying dielectric constants er provide surface passivation. Mildly doped N-d = 1 x 10(19) cm(-3), thin bodied structures (fin width F-w < 20 nm) with an organic dielectric (epsilon(r) = 1.7) were found to have promising electrical characteristics for FET sensor structures such as V-th similar to 0 V, high relative sensitivities in the subthreshold regime S > 95%, high transconductance values at threshold g(m),(Vfg=0V) > 10 nS, low subthreshold slopes SS similar to 60 mV/dec, high saturation currents I-d,I-max similar to 1-10 mu A and high I-on/I-off > 10(4)-10(10) ratios. Our results provide useful guidelines for the design of junctionless FET nanowire sensors that can be integrated into miniaturized, low power biosensing systems. (c) 2013 Elsevier B.V. All rights reserved.

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Type
research article
DOI
10.1016/j.snb.2013.03.028
Web of Science ID

WOS:000319868400001

Author(s)
Buitrago, Elizabeth
Fagas, Giorgos
Badia, Montserrat Fernández-Bolaños
Georgiev, Yordan M.
Berthomé, Matthieu  
Ionescu, Adrian Mihai  
Date Issued

2013

Publisher

Elsevier

Published in
Sensors and Actuators B: Chemical
Volume

183

Start page

1

End page

10

Subjects

Junctionless

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ISFET

•

Nanowire

•

Sensor

•

Fin FET

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Sensitive

•

Reference electrode

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
NANOLAB  
Available on Infoscience
April 10, 2013
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/91418
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