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research article
Critical Resistance at the Superconductor-Insulator Transition in Hole-Doped Cuprates
Here, we show that in several p-type cuprates, the superconductor-to-insulator transition (SIT) occurs at the critical sheet resistance approximately equal to the quantum resistance of pairs, RQ=h/4$e^{2}$=6.5 kΩ. In a relatively broad range of temperatures and doping levels near the quantum critical point, the sheet resistance shows universal behavior and scaling characteristic of two-dimensional quantum phase transition.
Type
research article
Web of Science ID
WOS:000317014500004
Authors
Publication date
2013
Publisher
Published in
Volume
26
Issue
4
Start page
749
End page
754
Peer reviewed
REVIEWED
EPFL units
Available on Infoscience
April 3, 2013
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