Static and dynamic properties of multi-section InGaN-based laser diodes

We have studied multi-section InGaN multiple-quantum-well (MQW) laser diodes grown on c-plane freestanding GaN substrate consisting of an absorber section (AS) and an amplifier gain section. As a result of the interplay between external bias applied to the AS and the internal piezoelectric and spontaneous polarization fields inherent to c-plane InGaN MQWs, the devices exhibit non-linear non-monotonic variations of the threshold current due to the quantum-confined Stark effect that takes place in the AS MQWs. We report on how this effect tailors the lasing characteristics and lasing dynamics, leading from a steady-state cw lasing regime for an unbiased AS to self-pulsation and Q-switching regimes at high negative absorber bias. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4768163]


Published in:
Journal Of Applied Physics, 112, 10
Year:
2012
Publisher:
Melville, Amer Inst Physics
ISSN:
0021-8979
Laboratories:




 Record created 2013-03-28, last modified 2018-03-17


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