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research article
Dispersion engineering of thick high-Q silicon nitride ring-resonators via atomic layer deposition
2012
We demonstrate dispersion engineering of integrated silicon nitride based ring resonators through conformal coating with hafnium dioxide deposited on top of the structures via atomic layer deposition. Both, magnitude and bandwidth of anomalous dispersion can be significantly increased. The results are confirmed by high resolution frequency-comb-assisted-diode-laser spectroscopy and are in very good agreement with the simulated modification of the mode spectrum. (C) 2012 Optical Society of America
Type
research article
Web of Science ID
WOS:000314746600044
Authors
Riemensberger, Johann
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Holzwarth, Ronald
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Publication date
2012
Publisher
Published in
Volume
20
Issue
25
Start page
27661
End page
27669
Peer reviewed
REVIEWED
EPFL units
Available on Infoscience
March 28, 2013
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