Dispersion engineering of thick high-Q silicon nitride ring-resonators via atomic layer deposition

We demonstrate dispersion engineering of integrated silicon nitride based ring resonators through conformal coating with hafnium dioxide deposited on top of the structures via atomic layer deposition. Both, magnitude and bandwidth of anomalous dispersion can be significantly increased. The results are confirmed by high resolution frequency-comb-assisted-diode-laser spectroscopy and are in very good agreement with the simulated modification of the mode spectrum. (C) 2012 Optical Society of America


Published in:
Optics Express, 20, 25, 27661-27669
Year:
2012
Publisher:
Washington, Optical Society of America
ISSN:
1094-4087
Laboratories:




 Record created 2013-03-28, last modified 2018-09-13


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