Measurement of polarization-induced electric fields in GaN/AlInN quantum wells

GaN(Si)/AlInN multiple quantum wells were grown on GaN/Al2O3 (0001) templates by metalorganic vapor-phase epitaxy. Transmission electron microscopy observations showed well-defined GaN quantum wells and AlInN barrier layers. Electrostatic potential profiles across the heterostructure have been measured using off-axis electron holography. A polarization-induced electric field with magnitude of similar to 2.2 +/- 0.1 MV/cm was measured across the GaN quantum wells, in reasonable agreement with simulated values. However, the measured fields across the AlInN barriers were considerably less than predicted from simulations: possible reasons are briefly discussed. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4772633]


Published in:
Applied Physics Letters, 101, 25
Year:
2012
Publisher:
Melville, Amer Inst Physics
ISSN:
0003-6951
Laboratories:




 Record created 2013-03-28, last modified 2018-12-03


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