Doping incorporation paths in catalyst-free Be-doped GaAs nanowires

The incorporation paths of Be in GaAs nanowires grown by the Ga-assisted method in molecular beam epitaxy have been investigated by electrical measurements of nanowires with different doping profiles. We find that Be atoms incorporate preferentially via the nanowire side facets, while the incorporation path through the Ga droplet is negligible. We also show that Be can diffuse into the volume of the nanowire giving an alternative incorporation path. This work is an important step towards controlled doping of nanowires and will serve as a help for designing future devices based on nanowires. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4772020]


Published in:
Applied Physics Letters, 102, 1
Year:
2013
Publisher:
Melville, American Institute of Physics
ISSN:
0003-6951
Laboratories:




 Record created 2013-03-28, last modified 2018-03-17

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