Comparative Study on the Performance of Five Different Hall Effect Devices

Five different Hall Effect sensors were modeled and their performance evaluated using a three dimensional simulator. The physical structure of the implemented sensors reproduces a certain technological fabrication process. Hall voltage, absolute, current-related, voltage-related and power-related sensitivities were obtained for each sensor. The effect of artificial offset was also investigated for cross-like structures. The simulation procedure guides the designer in choosing the Hall cell optimum shape, dimensions and device polarization conditions that would allow the highest performance.


Publié dans:
Sensors, 13, 2, 2093-2112
Année
2013
Publisher:
Basel, Mdpi Ag
ISSN:
1424-8220
Mots-clefs:
Laboratoires:




 Notice créée le 2013-03-28, modifiée le 2018-12-03


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