Metamorphic InAlAs/InGaAs/InAlAs/GaAs HEMT heterostructures containing strained superlattices and inverse steps in the metamorphic buffer
Metamorphic InxAl1-xAs buffer design features influence on electrophysical and structural properties of the heterostructures was investigated. Two types of MHEMT heterostructures In0.70Al0.30As/In0.76Ga0.24As with novel design contained inverse steps or strained superlattices were grown by MBE on GaAs substrates. Electrophysical properties of the heterostructures were characterized by Hall measurements, while the structural features were described with the help of different transmission electron microscopy techniques. The metamorphic HEMT with strained superlattices inserted in the metamorphic buffer had the smoother surface and more defect-free crystal structure, as well as a higher Hall mobility, than metamorphic HEMT with inverse steps within the metamorphic buffer. (C) 2012 Elsevier B.V. All rights reserved.
Keywords: Dislocations ; Molecular beam epitaxy ; Quantum wells ; Strained superlattices ; Metamorphic buffer ; Semiconducting indium gallium arsenide ; Semiconducting indium aluminum arsenide ; High electron mobility transistors
Record created on 2013-03-28, modified on 2016-08-09